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Title: | An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications |
Authors: | Sohiful Anuar, Zainol Murad Pokharel, R. K. Galal, A. I. A. Sapawi, R. Kanaya, H. Yoshida, K. |
Keywords: | Cascode Current-reused Phase linearity Power amplifier (PA) Ultra-wideband (UWB) CMOS technology |
Issue Date: | Sep-2010 |
Publisher: | Institute of Electrical and Elctronics Engineering (IEEE) |
Citation: | IEEE Microwave and Wireless Components Letters, vol. 20(9), 2010, pages 510-512 |
Abstract: | This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain at the upper end of the desired band, a shunt and a series peaking inductors with a resistive feedback at the second stage to obtain the wider and flat gain, while shunt-shunt feedback helps to enhance the bandwidth and improve the output wideband matching. The measurement results indicated that the input return loss S11 less than -6 dB, output return loss S22 less than -7 dB, and excellent gain flatness approximately 14.5 ±0.5 dB over the frequency range of interest. The output 1 dB compression of 7 dBm, the output third-order intercept point (OIP3) of 18 dBm, and a phase linearity property (group delay) of ± 178.5 ps across the whole band were obtained with a power consumption of 24 mW. |
Description: | Link to publisher's homepage at http://ieeexplore.ieee.org/ |
URI: | http://ieeexplore.ieee.org/xpls/abs_all.jsp?=&arnumber=5504002 http://dspace.unimap.edu.my/123456789/9890 |
ISSN: | 1531-1309 |
Appears in Collections: | School of Microelectronic Engineering (Articles) |
Files in This Item:
File | Description | Size | Format | |
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An excellent gain flatness 3.pdf | 45.66 kB | Adobe PDF | View/Open |
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