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DC Field | Value | Language |
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dc.contributor.author | Sohiful Anuar, Zainol Murad | - |
dc.contributor.author | Pokharel, R. K. | - |
dc.contributor.author | Galal, A. I. A. | - |
dc.contributor.author | Sapawi, R. | - |
dc.contributor.author | Kanaya, H. | - |
dc.contributor.author | Yoshida, K. | - |
dc.date.accessioned | 2010-10-19T07:11:08Z | - |
dc.date.available | 2010-10-19T07:11:08Z | - |
dc.date.issued | 2010-09 | - |
dc.identifier.citation | IEEE Microwave and Wireless Components Letters, vol. 20(9), 2010, pages 510-512 | en_US |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | http://ieeexplore.ieee.org/xpls/abs_all.jsp?=&arnumber=5504002 | - |
dc.identifier.uri | http://dspace.unimap.edu.my/123456789/9890 | - |
dc.description | Link to publisher's homepage at http://ieeexplore.ieee.org/ | en_US |
dc.description.abstract | This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain at the upper end of the desired band, a shunt and a series peaking inductors with a resistive feedback at the second stage to obtain the wider and flat gain, while shunt-shunt feedback helps to enhance the bandwidth and improve the output wideband matching. The measurement results indicated that the input return loss S11 less than -6 dB, output return loss S22 less than -7 dB, and excellent gain flatness approximately 14.5 ±0.5 dB over the frequency range of interest. The output 1 dB compression of 7 dBm, the output third-order intercept point (OIP3) of 18 dBm, and a phase linearity property (group delay) of ± 178.5 ps across the whole band were obtained with a power consumption of 24 mW. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Institute of Electrical and Elctronics Engineering (IEEE) | en_US |
dc.subject | Cascode | en_US |
dc.subject | Current-reused | en_US |
dc.subject | Phase linearity | en_US |
dc.subject | Power amplifier (PA) | en_US |
dc.subject | Ultra-wideband (UWB) | en_US |
dc.subject | CMOS technology | en_US |
dc.title | An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications | en_US |
dc.type | Article | en_US |
Appears in Collections: | School of Microelectronic Engineering (Articles) |
Files in This Item:
File | Description | Size | Format | |
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An excellent gain flatness 3.pdf | 45.66 kB | Adobe PDF | View/Open |
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