Design, simulation and characterization of 50nm p-well MOSFET using Sentaurus TCAD Software

Abstract

Device 50nm p-well MOSFET was designed, developed and optimized based on 90nm recipe using Sentaurus TCAD Software. In this project, there are two sub-programs used which are Sentaurus Process and Sentaurus Device. Sentaurus Process is a simulation process which in designing the semiconductor technology. While Sentaurus Device work as a device simulator to find the characteristic for each semiconductor design. The simulation results are shown in two dimensions (2D) in INSPECT and TECPLOT SV. The threshold voltages (Vth) for NMOS and PMOS of 50nm are 0.187V and -0.071V, the drain saturation current (Idsat) are 6.897e-04A and 1.22e-03A with the leakage current (Ioff) are 2.799e-07A and 2.507e-08A. The simulation results are almost the same with the theoretical.