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dc.contributor.authorMarlia, Morsin-
dc.contributor.authorMohd Khairul Amriey-
dc.contributor.authorAbdul Majeed, Zulkipli-
dc.contributor.authorRahmat, Sanudin-
dc.date.accessioned2010-08-18T03:16:11Z-
dc.date.available2010-08-18T03:16:11Z-
dc.date.issued2009-06-20-
dc.identifier.citationp.1-3en_US
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/8810-
dc.descriptionMalaysian Technical Universities Conference on Engineering and Technology organized by Universiti Malaysia Pahang in collaboration with Universiti Tun Hussein Onn Malaysia, Universiti Teknikal Malaysia Melaka & Universiti Malaysia Perlis on June 20th - 22nd, 2009, at MS Garden Hotel, Kuantan, Pahang, Malaysia.en_US
dc.description.abstractDevice 50nm p-well MOSFET was designed, developed and optimized based on 90nm recipe using Sentaurus TCAD Software. In this project, there are two sub-programs used which are Sentaurus Process and Sentaurus Device. Sentaurus Process is a simulation process which in designing the semiconductor technology. While Sentaurus Device work as a device simulator to find the characteristic for each semiconductor design. The simulation results are shown in two dimensions (2D) in INSPECT and TECPLOT SV. The threshold voltages (Vth) for NMOS and PMOS of 50nm are 0.187V and -0.071V, the drain saturation current (Idsat) are 6.897e-04A and 1.22e-03A with the leakage current (Ioff) are 2.799e-07A and 2.507e-08A. The simulation results are almost the same with the theoretical.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Pahangen_US
dc.relation.ispartofseriesProceedings of the Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009en_US
dc.subjectP-well MOSFETen_US
dc.subjectSentaurus Processen_US
dc.subjectSentaurus Deviceen_US
dc.subjectMOS (Metal Oxide Semiconductor) transistoren_US
dc.subjectMalaysian Technical Universities Conference on Engineering and Technology (MUCEET)en_US
dc.titleDesign, simulation and characterization of 50nm p-well MOSFET using Sentaurus TCAD Softwareen_US
dc.typeWorking Paperen_US
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