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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/8646
Title: Man-2403 resist development for electron beam lithography process
Authors: Nur Hamidah, Abdul Halim
Uda, Hashim, Prof. Dr.
Mohammad Nuzaihan, Md Nor
Keywords: E-beam lithography
Resist development
maN-2403
Malaysian Technical Universities Conference on Engineering and Technology (MUCEET)
Issue Date: 20-Jun-2009
Publisher: Universiti Malaysia Pahang
Series/Report no.: Proceedings of the Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009
Abstract: Line-width of resist patterns is more susceptible to the developing time than the thickness of the undeveloped resist. This project focused on the development of MaN-2403 resist for e-beam lithography process. The objective of this project is to observe the effect of exposure dose and development time to the physical structure of maN-2403 resist using scanning electron microscope (SEM) and atomic force microscopy (AFM). The incomplete development of exposed resist pattern caused bridging effect in ma-N2403 resist tone.
Description: Malaysian Technical Universities Conference on Engineering and Technology organized by Universiti Malaysia Pahang in collaboration with Universiti Tun Hussein Onn Malaysia, Universiti Teknikal Malaysia Melaka & Universiti Malaysia Perlis on June 20th - 22nd, 2009, at MS Garden Hotel, Kuantan, Pahang, Malaysia.
URI: http://dspace.unimap.edu.my/123456789/8646
Appears in Collections:Conference Papers
Uda Hashim, Prof. Ts. Dr.
Mohammad Nuzaihan Md Nor, Associate Professor Dr.

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