Please use this identifier to cite or link to this item:
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/8280
Title: | BST Capacitor Thin Films |
Authors: | Nurjuliana, Juhari Nur Syakimah, Ismail Nor Zahiyah, Nordin nurjuliana@unimap.edu.my |
Keywords: | BST thin films Capacitor UniMAP -- Exhibition UniMAP -- Research and development International Invention, Innovation and Technology Exhibition 2010 ITEX 2010 |
Issue Date: | 14-May-2010 |
Publisher: | Malaysian Invention and Design Society (MINDS) |
Series/Report no.: | 21st International Invention, Innovation and Technology Exhibition (ITEX) 2010 |
Abstract: | Ferroelectric Ba0.5Sr-0.5TiO3 (BST) thin film are well known as dielectric materials. They been used as capasitor and high density dynamic random access memory (DRAM) due to their high dielectric constant and high capacity of charge storage and ferroelectric device. |
Description: | Nurjuliana and her team won gold at 21st International Invention, Innovation and Technology Exhibition (ITEX) 2010, 14th - 16th May 2010 at Kuala Lumpur Convention Centre (KLCC), Kuala Lumpur, Malaysia. |
URI: | http://dspace.unimap.edu.my/123456789/8280 |
Appears in Collections: | Universiti Malaysia Perlis |
Files in This Item:
File | Description | Size | Format | |
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BST Capacitor Thin Films.pdf | Access is limited to UniMAP community | 110.18 kB | Adobe PDF | View/Open |
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