Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/8280
Full metadata record
DC FieldValueLanguage
dc.contributor.authorNurjuliana, Juhari-
dc.contributor.authorNur Syakimah, Ismail-
dc.contributor.authorNor Zahiyah, Nordin-
dc.date.accessioned2010-07-14T04:01:29Z-
dc.date.available2010-07-14T04:01:29Z-
dc.date.issued2010-05-14-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/8280-
dc.descriptionNurjuliana and her team won gold at 21st International Invention, Innovation and Technology Exhibition (ITEX) 2010, 14th - 16th May 2010 at Kuala Lumpur Convention Centre (KLCC), Kuala Lumpur, Malaysia.en_US
dc.description.abstractFerroelectric Ba0.5Sr-0.5TiO3 (BST) thin film are well known as dielectric materials. They been used as capasitor and high density dynamic random access memory (DRAM) due to their high dielectric constant and high capacity of charge storage and ferroelectric device.en_US
dc.language.isoenen_US
dc.publisherMalaysian Invention and Design Society (MINDS)en_US
dc.relation.ispartofseries21st International Invention, Innovation and Technology Exhibition (ITEX) 2010en_US
dc.subjectBST thin filmsen_US
dc.subjectCapacitoren_US
dc.subjectUniMAP -- Exhibitionen_US
dc.subjectUniMAP -- Research and developmenten_US
dc.subjectInternational Invention, Innovation and Technology Exhibition 2010en_US
dc.subjectITEX 2010en_US
dc.titleBST Capacitor Thin Filmsen_US
dc.typeImageen_US
dc.contributor.urlnurjuliana@unimap.edu.myen_US
Appears in Collections:Universiti Malaysia Perlis

Files in This Item:
File Description SizeFormat 
BST Capacitor Thin Films.pdfAccess is limited to UniMAP community110.18 kBAdobe PDFView/Open


Items in UniMAP Library Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.