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Title: | The effect of Ti on physical properties of Fe2O3 thin films for gas sensor applications |
Authors: | Sami Salman, Chiad Tahseen H., Mubarak dr.sami@uomustansiriyah.edu.iq |
Keywords: | Fe2O3 Ti SEM AFM Gas Sensitivity |
Issue Date: | Apr-2020 |
Publisher: | Universiti Malaysia Perlis (UniMAP) |
Citation: | International Journal of Nanoelectronics and Materials, vol.13(2), 2020, pages 221-232 |
Abstract: | Hematite (Fe2O3) and titanium (1 wt% and 3 wt%) doped Fe2O3 were prepared onto glass and p-type silicon wafer using the pulsed laser deposition technique. X-ray diffraction analysis indicates that samples of pure and Ti-doped were polycrystalline with a crystal orientation along (113) plane. The average grain size increases with the increasing titanium content. Surface morphology was studied through a Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM), which reveal that grains are columnar in shape. UV-visible transmission spectroscopy reveals that the deposited films are transparent within a visible range. The value of the optical bandgap exhibits a decrease from 1.93 eV to 1.48 eV as titanium concentration increases. Gas sensitivity measurements at 30°C. showed a decrease in sensitivity with the increase of doping and gas concentration. |
Description: | Link to publisher's homepage at http://ijneam.unimap.edu.my |
URI: | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/65224 |
ISSN: | 1985-5761 (Printed) 1997-4434 (Online) |
Appears in Collections: | International Journal of Nanoelectronics and Materials (IJNeaM) |
Files in This Item:
File | Description | Size | Format | |
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The Effect of Ti on Physical Properties of Fe2O3 Thin Films for.pdf | 1.82 MB | Adobe PDF | View/Open |
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