Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/65224
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dc.contributor.authorSami Salman, Chiad-
dc.contributor.authorTahseen H., Mubarak-
dc.date.accessioned2020-06-24T04:11:04Z-
dc.date.available2020-06-24T04:11:04Z-
dc.date.issued2020-04-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.13(2), 2020, pages 221-232en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn1997-4434 (Online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/65224-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractHematite (Fe2O3) and titanium (1 wt% and 3 wt%) doped Fe2O3 were prepared onto glass and p-type silicon wafer using the pulsed laser deposition technique. X-ray diffraction analysis indicates that samples of pure and Ti-doped were polycrystalline with a crystal orientation along (113) plane. The average grain size increases with the increasing titanium content. Surface morphology was studied through a Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM), which reveal that grains are columnar in shape. UV-visible transmission spectroscopy reveals that the deposited films are transparent within a visible range. The value of the optical bandgap exhibits a decrease from 1.93 eV to 1.48 eV as titanium concentration increases. Gas sensitivity measurements at 30°C. showed a decrease in sensitivity with the increase of doping and gas concentration.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectFe2O3en_US
dc.subjectTien_US
dc.subjectSEMen_US
dc.subjectAFMen_US
dc.subjectGas Sensitivityen_US
dc.titleThe effect of Ti on physical properties of Fe2O3 thin films for gas sensor applicationsen_US
dc.typeArticleen_US
dc.identifier.urlhttp://ijneam.unimap.edu.my-
dc.contributor.urldr.sami@uomustansiriyah.edu.iqen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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