Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/65224
Title: The effect of Ti on physical properties of Fe2O3 thin films for gas sensor applications
Authors: Sami Salman, Chiad
Tahseen H., Mubarak
dr.sami@uomustansiriyah.edu.iq
Keywords: Fe2O3
Ti
SEM
AFM
Gas Sensitivity
Issue Date: Apr-2020
Publisher: Universiti Malaysia Perlis (UniMAP)
Citation: International Journal of Nanoelectronics and Materials, vol.13(2), 2020, pages 221-232
Abstract: Hematite (Fe2O3) and titanium (1 wt% and 3 wt%) doped Fe2O3 were prepared onto glass and p-type silicon wafer using the pulsed laser deposition technique. X-ray diffraction analysis indicates that samples of pure and Ti-doped were polycrystalline with a crystal orientation along (113) plane. The average grain size increases with the increasing titanium content. Surface morphology was studied through a Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM), which reveal that grains are columnar in shape. UV-visible transmission spectroscopy reveals that the deposited films are transparent within a visible range. The value of the optical bandgap exhibits a decrease from 1.93 eV to 1.48 eV as titanium concentration increases. Gas sensitivity measurements at 30°C. showed a decrease in sensitivity with the increase of doping and gas concentration.
Description: Link to publisher's homepage at http://ijneam.unimap.edu.my
URI: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/65224
ISSN: 1985-5761 (Printed)
1997-4434 (Online)
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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