Effect of crystallinity and morphology on the electrical properties of Y2O3 thin films prepared by pulsed laser deposition for MOSFET

Abstract

The paper focuses on the effect of the crystalline structure and surface morphology on the electrical properties of Yttrium oxide (Y2O3) thin films. The impact on the change in substrate temperature from ambient to 650°C in low oxygen pressure (0.0034mbar) was realized by change in crystallinity and morphology. The XRD result shows the preferred orientation along the (400) plane. The effect of substrate temperature on the crystal structure has been studied and the same impact has been observed in film morphology using scanning electron microscopy. The higher dielectric constant of 21 was observed at room temperature deposition. The transfer characteristic of Y2O3 gate dielectric based Si-MOSFET gives current ratio ION/IOFF of 107 and threshold voltage of -2.8V. Furthermore, from output characteristics, the obtained Idss is 0.415 mA. The high ION/IOFF, makes it suitable for digital gates, optical electronics, SMPS and portable electronic applications.