Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49933
Title: Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT)
Authors: Sharma, Prachi
Gupta, Navneet
prachi.sharma@pilani.bits-pilani.ac.in
ngupta@pilani.bits-pilani.ac.in
Keywords: Nanocrystalline silicon
Thin film transistor
TCAD
ATLAS
Channel length
Density of states
Issue Date: 2017
Publisher: Universiti Malaysia Perlis (UniMAP)
Citation: International Journal of Nanoelectronics and Materials, vol.10 (2), 2017, pages 101-110
Abstract: In this paper, we have presented the effect of the density-of-states (DOS) parameters on the performance of n-channel top gated staggered nc-Si TFT. The analysis was performed using ATLAS 2D TCAD simulator from SILVACO. The variation in DOS in nc-Si material and thus on the TFT device performance occurred by altering the channel length and channel quality is presented. The simulation results reveal that the increase in channel length and the degradation in channel quality degrade the trans-conductance and drain current. By iterating the order of parasitic resistance and the value of characteristic decay energy related to material quality, the same trend is achieved for simulated and experimental results for nc- Si TFT with W/L=200μm/50μm.
Description: Link to publisher's homepage at http://ijneam.unimap.edu.my/
URI: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49933
ISSN: 1985-5761 (Printed)
1997-4434 (Online)
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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