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dc.contributor.authorZaliman, Sauli, Dr.
dc.contributor.authorRetnasamy, Vithyacharan
dc.contributor.authorFairul Afzal, Ahmad Fuad
dc.contributor.authorEhkan, Phaklen, Dr.
dc.contributor.authorSteven, Taniselass
dc.date.accessioned2014-06-11T09:17:39Z
dc.date.available2014-06-11T09:17:39Z
dc.date.issued2013
dc.identifier.citationApplied Mechanics and Materials, vol. 404, 2013, pages 77-81en_US
dc.identifier.isbn978-303785845-5
dc.identifier.issn1660-9336
dc.identifier.urihttp://www.scientific.net/AMM.404.77
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/35388
dc.descriptionLink to publisher's homepage at http://www.ttp.net/en_US
dc.description.abstractThe effects of chemical bath time in response to the bump height in electroless nickel immersion gold (ENIG) process was investigated. This paper presents the correlation between electroless process time, immersion gold process time and the bump height. A certain bump height need to be achieved in order to create acceptable solder bumps for reflow process. The study was done using a full factorial design of experiment (DOE). The DOE matrix is made of two levels with two factors. Analysis was done by plotting the main effects plot for each factor. The results suggest that higher process time increases the plating rate where the temperature fixed at 70°C. Electroless nickel time has more influence to the bump height compared to immersion gold time.en_US
dc.language.isoenen_US
dc.publisherTrans Tech Publications (TTP)en_US
dc.subjectBump heighten_US
dc.subjectControllable parametersen_US
dc.subjectDOEen_US
dc.subjectENIGen_US
dc.titleBump height at low temperature analysisen_US
dc.typeArticleen_US
dc.contributor.urlzaliman@unimap.edu.myen_US
dc.contributor.urlrcharan@unimap.edu.myen_US
dc.contributor.urlfairul@unimap.edu.myen_US
dc.contributor.urlphaklen@unimap.edu.myen_US
dc.contributor.urlsteven@unimap.edu.myen_US
Appears in Collections:Steven Taniselass, Mr.
Vithyacharan Retnasamy
Zaliman Sauli, Lt. Kol. Professor Dr.
Fairul Afzal Ahmad Fuad
School of Microelectronic Engineering (Articles)
School of Computer and Communication Engineering (Articles)

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