Theoretical characteristics of 1.55 μm InN based quantum dot laser

Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/34183

Title:	Theoretical characteristics of 1.55 μm InN based quantum dot laser
Authors:	Md Mottaleb, Hossain Md. Abdullah, Al Humayun Ashraful Ghani, Bhuiyan mottaleb@chtm.unm.edu humayun0403063@gmail.com
Keywords:	Differential quantum efficiency InN Modal gain Normalized surface density Quantum dot Transparency threshold
Issue Date:	Aug-2013
Publisher:	The International Society for Optical Engineering (SPIE)
Citation:	Proceedings of SPIE - The International Society for Optical Engineering, vol. 8883, 2013, pages
Abstract:	The theoretical characteristics of photon emission at 1.55 μm wavelength are presented considering single layer of indium nitride (InN) quantum dots in the active region. The transparency threshold has been obtained at photon energy of 0.8016 eV and at zero normalized applied transition energy, respectively. The modal gain of about 12.5 cm-1 is obtained at the threshold current density of 51 Acm-2. The external differential quantum efficiency of 65% has been achieved for the cavity length of 640 μm. The proposed structure with acceptable enhanced results will create a way to fabricate InN based quantum dot laser.
Description:	Link to publisher's homepage at http://spie.org/
URI:	http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1745135 http://dspace.unimap.edu.my:80/dspace/handle/123456789/34183
ISBN:	978-081949666-9
ISSN:	0277-786X
Appears in Collections:	School of Electrical Systems Engineering (Articles)

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