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dc.contributor.authorMd Mottaleb, Hossain-
dc.contributor.authorMd. Abdullah, Al Humayun-
dc.contributor.authorAshraful Ghani, Bhuiyan-
dc.date.accessioned2014-04-30T01:58:10Z-
dc.date.available2014-04-30T01:58:10Z-
dc.date.issued2013-08-
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, vol. 8883, 2013, pagesen_US
dc.identifier.isbn978-081949666-9-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1745135-
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/34183-
dc.descriptionLink to publisher's homepage at http://spie.org/en_US
dc.description.abstractThe theoretical characteristics of photon emission at 1.55 μm wavelength are presented considering single layer of indium nitride (InN) quantum dots in the active region. The transparency threshold has been obtained at photon energy of 0.8016 eV and at zero normalized applied transition energy, respectively. The modal gain of about 12.5 cm-1 is obtained at the threshold current density of 51 Acm-2. The external differential quantum efficiency of 65% has been achieved for the cavity length of 640 μm. The proposed structure with acceptable enhanced results will create a way to fabricate InN based quantum dot laser.en_US
dc.language.isoenen_US
dc.publisherThe International Society for Optical Engineering (SPIE)en_US
dc.subjectDifferential quantum efficiencyen_US
dc.subjectInNen_US
dc.subjectModal gainen_US
dc.subjectNormalized surface densityen_US
dc.subjectQuantum doten_US
dc.subjectTransparency thresholden_US
dc.titleTheoretical characteristics of 1.55 μm InN based quantum dot laseren_US
dc.typeArticleen_US
dc.contributor.urlmottaleb@chtm.unm.eduen_US
dc.contributor.urlhumayun0403063@gmail.comen_US
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