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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/34054| Title: | A Novel AC technique for high quality porous GaN |
| Authors: | Ainorkhilah, Mahmood Naser Mahmoud, Ahmed, Dr. Yuhamdan, Yusof Yam, Fong Kwong, Dr. Chuah, Lee Siang, Dr. Husnen R., Abd Zainuriah, Hassan ainor_khilah@yahoo.com.my naser@usm.my yamfk@usm.my husnen78@yahoo.com zai@usm.my |
| Keywords: | Alternating current photo-assisted electrochemical etching (ACPEC) Photoluminescence Porous GaN Raman Spectroscopy Scanning Electron Microscopy (SEM) |
| Issue Date: | Apr-2013 |
| Publisher: | Electrochemical Science Group (ESG) |
| Citation: | International Journal of Electrochemical Science, vol. 8(4), 2013, pages 5801-5809 |
| Abstract: | In this paper, we report the formation of porous GaN films under a novel alternatingcurrent (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac formed porous GaN with excellent structural and optical properties. Field emission scanning electron microscope (FESEM) micrographs indicated that the shapes of the pores are high quality hexagonal like and nano-building structures. The porous layer exhibited a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation. |
| Description: | Link to publisher's homepage at http://www.electrochemsci.org |
| URI: | http://www.electrochemsci.org/list13.htm#issue4 http://dspace.unimap.edu.my:80/dspace/handle/123456789/34054 |
| ISSN: | 1452-3981 |
| Appears in Collections: | Institute of Nano Electronic Engineering (INEE) (Articles) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| A Novel AC technique for high quality porous GaN.pdf | 488.86 kB | Adobe PDF | View/Open |
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