Please use this identifier to cite or link to this item:
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/34054
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ainorkhilah, Mahmood | - |
dc.contributor.author | Naser Mahmoud, Ahmed, Dr. | - |
dc.contributor.author | Yuhamdan, Yusof | - |
dc.contributor.author | Yam, Fong Kwong, Dr. | - |
dc.contributor.author | Chuah, Lee Siang, Dr. | - |
dc.contributor.author | Husnen R., Abd | - |
dc.contributor.author | Zainuriah, Hassan | - |
dc.date.accessioned | 2014-04-25T09:26:56Z | - |
dc.date.available | 2014-04-25T09:26:56Z | - |
dc.date.issued | 2013-04 | - |
dc.identifier.citation | International Journal of Electrochemical Science, vol. 8(4), 2013, pages 5801-5809 | en_US |
dc.identifier.issn | 1452-3981 | - |
dc.identifier.uri | http://www.electrochemsci.org/list13.htm#issue4 | - |
dc.identifier.uri | http://dspace.unimap.edu.my:80/dspace/handle/123456789/34054 | - |
dc.description | Link to publisher's homepage at http://www.electrochemsci.org | en_US |
dc.description.abstract | In this paper, we report the formation of porous GaN films under a novel alternatingcurrent (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac formed porous GaN with excellent structural and optical properties. Field emission scanning electron microscope (FESEM) micrographs indicated that the shapes of the pores are high quality hexagonal like and nano-building structures. The porous layer exhibited a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Electrochemical Science Group (ESG) | en_US |
dc.subject | Alternating current photo-assisted electrochemical etching (ACPEC) | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Porous GaN | en_US |
dc.subject | Raman Spectroscopy | en_US |
dc.subject | Scanning Electron Microscopy (SEM) | en_US |
dc.title | A Novel AC technique for high quality porous GaN | en_US |
dc.type | Article | en_US |
dc.contributor.url | ainor_khilah@yahoo.com.my | en_US |
dc.contributor.url | naser@usm.my | en_US |
dc.contributor.url | yamfk@usm.my | en_US |
dc.contributor.url | husnen78@yahoo.com | en_US |
dc.contributor.url | zai@usm.my | en_US |
Appears in Collections: | Institute of Nano Electronic Engineering (INEE) (Articles) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
A Novel AC technique for high quality porous GaN.pdf | 488.86 kB | Adobe PDF | View/Open |
Items in UniMAP Library Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.