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dc.contributor.authorAinorkhilah, Mahmood-
dc.contributor.authorNaser Mahmoud, Ahmed, Dr.-
dc.contributor.authorYuhamdan, Yusof-
dc.contributor.authorYam, Fong Kwong, Dr.-
dc.contributor.authorChuah, Lee Siang, Dr.-
dc.contributor.authorHusnen R., Abd-
dc.contributor.authorZainuriah, Hassan-
dc.date.accessioned2014-04-25T09:26:56Z-
dc.date.available2014-04-25T09:26:56Z-
dc.date.issued2013-04-
dc.identifier.citationInternational Journal of Electrochemical Science, vol. 8(4), 2013, pages 5801-5809en_US
dc.identifier.issn1452-3981-
dc.identifier.urihttp://www.electrochemsci.org/list13.htm#issue4-
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/34054-
dc.descriptionLink to publisher's homepage at http://www.electrochemsci.orgen_US
dc.description.abstractIn this paper, we report the formation of porous GaN films under a novel alternatingcurrent (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac formed porous GaN with excellent structural and optical properties. Field emission scanning electron microscope (FESEM) micrographs indicated that the shapes of the pores are high quality hexagonal like and nano-building structures. The porous layer exhibited a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation.en_US
dc.language.isoenen_US
dc.publisherElectrochemical Science Group (ESG)en_US
dc.subjectAlternating current photo-assisted electrochemical etching (ACPEC)en_US
dc.subjectPhotoluminescenceen_US
dc.subjectPorous GaNen_US
dc.subjectRaman Spectroscopyen_US
dc.subjectScanning Electron Microscopy (SEM)en_US
dc.titleA Novel AC technique for high quality porous GaNen_US
dc.typeArticleen_US
dc.contributor.urlainor_khilah@yahoo.com.myen_US
dc.contributor.urlnaser@usm.myen_US
dc.contributor.urlyamfk@usm.myen_US
dc.contributor.urlhusnen78@yahoo.comen_US
dc.contributor.urlzai@usm.myen_US
Appears in Collections:Institute of Nano Electronic Engineering (INEE) (Articles)

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