Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/33691
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dc.contributor.authorNurhafizah, Ramli-
dc.contributor.authorZaliman, Sauli, Dr.-
dc.contributor.authorRetnasamy, Vithyacharan-
dc.contributor.authorThey, Yee Chin-
dc.contributor.authorKhairul Anwar, Mohamad Khazali-
dc.contributor.authorNooraihan, Abdullah-
dc.date.accessioned2014-04-14T13:13:27Z-
dc.date.available2014-04-14T13:13:27Z-
dc.date.issued2014-01-
dc.identifier.citationApplied Mechanics and Materials, vol.487, 2014, pages 29-32en_US
dc.identifier.issn1662-7482-
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/33691-
dc.descriptionLink to publisher's homepage at http://www.ttp.net/en_US
dc.description.abstractBarium Strontium Titanate (BST) a common topic in the microelectronic field for many devices which is mainly on dynamic random access memories (DRAM). There are many methods of preparing BaₓSr₁-ₓTiO3; barium strontium titanate. In this work, sol-gel method was used as it has some advantages like better homogeneity, lower cost, lower processing temperature and easier fabrication. BaₓSr₁-ₓTiO3 solution was deposited on the silicon substrate of 4 different thicknesses with different ratio of the concentration of Barium (Ba). The thickness of the thin film has a linear increase as the Ba content increases.en_US
dc.language.isoenen_US
dc.publisherTrans Tech Publicationsen_US
dc.subjectBarium Strontium Titanate (BST)en_US
dc.subjectFilm thicknessen_US
dc.titleBaₓSr₁-ₓ TiO₃ different thickness analysis using sol gel approachen_US
dc.typeArticleen_US
dc.identifier.urlhttp://www.scientific.net/AMM.487.29-
dc.identifier.doi10.4028/www.scientific.net/AMM.487.29-
dc.contributor.urlzaliman@unimap.edu.myen_US
Appears in Collections:Khairul Anwar Mohamad Khazali, Dr.
Nooraihan Abdullah, Dr.
Vithyacharan Retnasamy
Zaliman Sauli, Lt. Kol. Professor Dr.
Institute of Engineering Mathematics (Articles)
School of Microelectronic Engineering (Articles)

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