1. UniMAP Library Digital Repository
  2. Journal Articles
  3. Institute of Nano Electronic Engineering (INEE) (Articles)
Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/33206
Title: Influence of current density on porous silicon characteristics
Authors: Husnen R., Abd
Naser Mahmoud, Ahmed, Dr.
Yarub, Al-Douri, Assoc. Prof. Dr.
Uda, Hashim, Prof. Dr.
husnen78@yahoo.com
naser@usm.my
yarub@unimap.edu.my
uda@unimap.edu.my
Keywords: Electrochemical etching
FE-SEM
Photoluminescence
Porous silicon
Surface roughness
Issue Date: 2013
Publisher: Trans Tech Publications
Citation: Advanced Materials Research, vol. 795, 2013, pages 219-222
Abstract: Porous silicon structures have been fabricated by electrochemical etching using different current density. From field emission scanning electron microscope images (FE-SEM) it was observed that more uniform distribution of pores is obtained when the current density was increased from 20mA/cm2 to30 mA/cm2. The porosity is estimated based on the analysis of FE-SEM and gravimetric analysis, the results were confirmed by reflectivity measurements which show that the high current density and porous samples have low reflection for wide spectrum. Results show good improvement in the solar cell efficiency.
Description: Link to publisher's homepage at http://www.ttp.net/
URI: http://www.scientific.net/AMR.795.219
http://dspace.unimap.edu.my:80/dspace/handle/123456789/33206
ISBN: 978-303785811-0
ISSN: 1022-6680
Appears in Collections:Institute of Nano Electronic Engineering (INEE) (Articles)
Uda Hashim, Prof. Ts. Dr.

Files in This Item:
File Description SizeFormat 
Influence of current density on porous silicon characteristics.pdf6.07 kBAdobe PDFView/Open
Show full item record


Items in UniMAP Library Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.