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dc.contributor.authorHusnen R., Abd-
dc.contributor.authorNaser Mahmoud, Ahmed, Dr.-
dc.contributor.authorYarub, Al-Douri, Assoc. Prof. Dr.-
dc.contributor.authorUda, Hashim, Prof. Dr.-
dc.date.accessioned2014-03-30T02:50:30Z-
dc.date.available2014-03-30T02:50:30Z-
dc.date.issued2013-
dc.identifier.citationAdvanced Materials Research, vol. 795, 2013, pages 219-222en_US
dc.identifier.isbn978-303785811-0-
dc.identifier.issn1022-6680-
dc.identifier.urihttp://www.scientific.net/AMR.795.219-
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/33206-
dc.descriptionLink to publisher's homepage at http://www.ttp.net/en_US
dc.description.abstractPorous silicon structures have been fabricated by electrochemical etching using different current density. From field emission scanning electron microscope images (FE-SEM) it was observed that more uniform distribution of pores is obtained when the current density was increased from 20mA/cm2 to30 mA/cm2. The porosity is estimated based on the analysis of FE-SEM and gravimetric analysis, the results were confirmed by reflectivity measurements which show that the high current density and porous samples have low reflection for wide spectrum. Results show good improvement in the solar cell efficiency.en_US
dc.language.isoenen_US
dc.publisherTrans Tech Publicationsen_US
dc.subjectElectrochemical etchingen_US
dc.subjectFE-SEMen_US
dc.subjectPhotoluminescenceen_US
dc.subjectPorous siliconen_US
dc.subjectSurface roughnessen_US
dc.titleInfluence of current density on porous silicon characteristicsen_US
dc.typeArticleen_US
dc.contributor.urlhusnen78@yahoo.comen_US
dc.contributor.urlnaser@usm.myen_US
dc.contributor.urlyarub@unimap.edu.myen_US
dc.contributor.urluda@unimap.edu.myen_US
Appears in Collections:Institute of Nano Electronic Engineering (INEE) (Articles)
Uda Hashim, Prof. Ts. Dr.

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