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dc.contributor.authorZaliman, Sauli, Dr.
dc.contributor.authorRetnasamy, Vithyacharan
dc.contributor.authorWan Mokhzani, Wan Norhaimi
dc.contributor.authorJohari, Adnan, Assc. Prof. Dr.
dc.contributor.authorPalianysamy, Moganraj
dc.date.accessioned2014-03-13T03:32:11Z
dc.date.available2014-03-13T03:32:11Z
dc.date.issued2012-12
dc.identifier.citationAdvanced Materials Research, vol.262-623, 2012, pages 643-646en_US
dc.identifier.issn1662-8985
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/32646
dc.descriptionLink to publisher's homepage at http://www.ttp.net/en_US
dc.description.abstractWire bonding process is an interconnection method adopted in the semiconductor packaging manufactory. One of the method used to assess the reliability and bond strength of the bonded wires are wire bond shear test .In this study, simulation on wire bond shear test is done to evaluate the stress response of the bonded wire when sheared on a hemispherical surface bond pad. The contrast between three types of wire material:gold(Au), aluminum(Al) and copper(Cu) were carry out to examine the effects of wire material on the stress response of bonded wire during wire bond shear test. The simulation results showed that copper wire bond induces highest stress and gold wire exhibits the least stress response.en_US
dc.language.isoenen_US
dc.publisherTrans Tech Publicationsen_US
dc.subjectANSYSen_US
dc.subjectHemisphere surface bond paden_US
dc.subjectShear testen_US
dc.subjectWire bonden_US
dc.titleWire bond shear test simulation on hemispherical surface bond paden_US
dc.typeArticleen_US
dc.contributor.advisorW.M.W. Norhaimi, J. Adnan, M. Palianysamyen_US
dc.identifier.urlhttp://www.scientific.net/AMR.622-623.643
dc.contributor.urlvc.sundress@gmail.comen_US
Appears in Collections:Vithyacharan Retnasamy
Zaliman Sauli, Lt. Kol. Professor Dr.
School of Microelectronic Engineering (Articles)

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