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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/32611| Title: | Optoelectronic properties of GaAs and AlAs under temperature effect |
| Authors: | Yarub, Al-Douri, Assoc. Prof. Dr. Ali Hussain, Reshak, Prof. Dr. Uda, Hashim, Prof. Dr. yaldouri@yahoo.com yarub@unimap.edu.my maalidph@yahoo.co.uk uda@unimap.edu.my |
| Keywords: | Empirical Pseudopotential Method III-V semiconductors Temperature effect |
| Issue Date: | Aug-2013 |
| Publisher: | Elsevier GmbH |
| Citation: | Optik, vol. 124(15), 2013, pages 2128-2130 |
| Abstract: | An application study of optoelectronic properties as a function of the temperature for GaAs and AlAs according to our model has been presented using empirical pseudopotential method (EPM). The structural phase transition can be seen easily from behavior of the bonding character. The results are compared with the experimental data with reasonable agreement |
| Description: | Link to publisher's homepage at www.elsevier.de/ |
| URI: | http://www.sciencedirect.com/science/article/pii/S0030402612004664 http://dspace.unimap.edu.my:80/dspace/handle/123456789/32611 |
| ISSN: | 0030-4026 |
| Appears in Collections: | School of Materials Engineering (Articles) Uda Hashim, Prof. Ts. Dr. Institute of Nano Electronic Engineering (INEE) (Articles) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Optoelectronic properties of GaAs and AlAs under temperature effect.pdf | 8.93 kB | Adobe PDF | View/Open |
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