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dc.contributor.authorYarub, Al-Douri, Assoc. Prof. Dr.-
dc.contributor.authorAli Hussain, Reshak, Prof. Dr.-
dc.contributor.authorUda, Hashim, Prof. Dr.-
dc.date.accessioned2014-03-12T02:51:44Z-
dc.date.available2014-03-12T02:51:44Z-
dc.date.issued2013-08-
dc.identifier.citationOptik, vol. 124(15), 2013, pages 2128-2130en_US
dc.identifier.issn0030-4026-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0030402612004664-
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/32611-
dc.descriptionLink to publisher's homepage at www.elsevier.de/en_US
dc.description.abstractAn application study of optoelectronic properties as a function of the temperature for GaAs and AlAs according to our model has been presented using empirical pseudopotential method (EPM). The structural phase transition can be seen easily from behavior of the bonding character. The results are compared with the experimental data with reasonable agreementen_US
dc.language.isoenen_US
dc.publisherElsevier GmbHen_US
dc.subjectEmpirical Pseudopotential Methoden_US
dc.subjectIII-V semiconductorsen_US
dc.subjectTemperature effecten_US
dc.titleOptoelectronic properties of GaAs and AlAs under temperature effecten_US
dc.typeArticleen_US
dc.contributor.urlyaldouri@yahoo.comen_US
dc.contributor.urlyarub@unimap.edu.myen_US
dc.contributor.urlmaalidph@yahoo.co.uken_US
dc.contributor.urluda@unimap.edu.myen_US
Appears in Collections:School of Materials Engineering (Articles)
Uda Hashim, Prof. Ts. Dr.
Institute of Nano Electronic Engineering (INEE) (Articles)

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