Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/32387
Title: Modeling of structural properties of hexagonal semiconductors
Authors: Ghassan E., Arif
Farah Aini, Abdullah, Dr.
Yarub, Al-Douri, Assoc. Prof. Dr.
ghasanarif@yahoo.com
farahaini@usm.my
yarub@unimap.edu.my
Keywords: Structure semiconductors
Mathematical model
Density functional theory (DFT)
Issue Date: 2013
Publisher: Elsevier B.V.
Citation: Procedia Engineering, vol. 53, 2013, pages 707-709
Abstract: Bulk modulus of hexagonal structure semiconductors are calculated by using density functional theory (DFT) of full-potential linear augmented plane wave (FP-LAPW) within general gradient approximation (GGA). In this work, a new mathematical model based on analytical expression and differential equation is established. Our calculated values are in accordance with the experimental one.
Description: Link to publisher's homepage at http://www.elsevier.com/
URI: http://www.sciencedirect.com/science/article/pii/S1877705813002117
http://dspace.unimap.edu.my:80/dspace/handle/123456789/32387
ISSN: 1877-7058
Appears in Collections:Institute of Nano Electronic Engineering (INEE) (Articles)

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