Please use this identifier to cite or link to this item:
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/32387
Title: | Modeling of structural properties of hexagonal semiconductors |
Authors: | Ghassan E., Arif Farah Aini, Abdullah, Dr. Yarub, Al-Douri, Assoc. Prof. Dr. ghasanarif@yahoo.com farahaini@usm.my yarub@unimap.edu.my |
Keywords: | Structure semiconductors Mathematical model Density functional theory (DFT) |
Issue Date: | 2013 |
Publisher: | Elsevier B.V. |
Citation: | Procedia Engineering, vol. 53, 2013, pages 707-709 |
Abstract: | Bulk modulus of hexagonal structure semiconductors are calculated by using density functional theory (DFT) of full-potential linear augmented plane wave (FP-LAPW) within general gradient approximation (GGA). In this work, a new mathematical model based on analytical expression and differential equation is established. Our calculated values are in accordance with the experimental one. |
Description: | Link to publisher's homepage at http://www.elsevier.com/ |
URI: | http://www.sciencedirect.com/science/article/pii/S1877705813002117 http://dspace.unimap.edu.my:80/dspace/handle/123456789/32387 |
ISSN: | 1877-7058 |
Appears in Collections: | Institute of Nano Electronic Engineering (INEE) (Articles) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Modeling of structural properties of hexagonal semi conductors.pdf | 8.95 kB | Adobe PDF | View/Open |
Items in UniMAP Library Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.