Modeling of structural properties of hexagonal semiconductors

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DC Field	Value	Language
dc.contributor.author	Ghassan E., Arif	-
dc.contributor.author	Farah Aini, Abdullah, Dr.	-
dc.contributor.author	Yarub, Al-Douri, Assoc. Prof. Dr.	-
dc.date.accessioned	2014-03-06T04:09:31Z	-
dc.date.available	2014-03-06T04:09:31Z	-
dc.date.issued	2013	-
dc.identifier.citation	Procedia Engineering, vol. 53, 2013, pages 707-709	en_US
dc.identifier.issn	1877-7058	-
dc.identifier.uri	http://www.sciencedirect.com/science/article/pii/S1877705813002117	-
dc.identifier.uri	http://dspace.unimap.edu.my:80/dspace/handle/123456789/32387	-
dc.description	Link to publisher's homepage at http://www.elsevier.com/	en_US
dc.description.abstract	Bulk modulus of hexagonal structure semiconductors are calculated by using density functional theory (DFT) of full-potential linear augmented plane wave (FP-LAPW) within general gradient approximation (GGA). In this work, a new mathematical model based on analytical expression and differential equation is established. Our calculated values are in accordance with the experimental one.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier B.V.	en_US
dc.subject	Structure semiconductors	en_US
dc.subject	Mathematical model	en_US
dc.subject	Density functional theory (DFT)	en_US
dc.title	Modeling of structural properties of hexagonal semiconductors	en_US
dc.type	Article	en_US
dc.contributor.url	ghasanarif@yahoo.com	en_US
dc.contributor.url	farahaini@usm.my	en_US
dc.contributor.url	yarub@unimap.edu.my	en_US
Appears in Collections:	Institute of Nano Electronic Engineering (INEE) (Articles)

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