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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/32384
Title: Alternative-current electrochemical etching of uniform porous silicon for photodetector applications
Authors: Husnen R., Abd
Yarub, Al-Douri, Assoc. Prof. Dr.
Naser Mahmoud, Ahmed, Dr.
Uda, Hashim, Prof. Dr.
husnen78@yahoo.com
yarub@unimap.edu.my
naser@usm.my
uda@unimap.edu.my
Keywords: Alternative current
Electrical properties
Porous silicon
Issue Date: 2013
Publisher: Electrochemical Science Group
Citation: International Journal of Electrochemical Science, vol. 8(9), 2013, pages 11461-11473
Abstract: The twining of alternative-current (AC) with electrochemical etching (ECE) to fabricate porous silicon (PS) is studied. The porosity percentage is obtained by gravimetric analysis. The effect of different current densities; 20, 25 and 30 mA/cm2 at 30 min on morphology and electrical properties of PS have been investigated. The electrical properties of I-V characteristics, Schottky barrier height, photoresponse and resposivity of PS are analyzed. The quantum efficiency is measured under different current densities. The obtained results showed quite distinguished results for best performance of photodetectors.
Description: Link to publisher's homepage at http://www.electrochemsci.org/
URI: http://www.electrochemsci.org/list13.htm#issue9
http://dspace.unimap.edu.my:80/dspace/handle/123456789/32384
ISSN: 1452-3981
Appears in Collections:Uda Hashim, Prof. Ts. Dr.
Institute of Nano Electronic Engineering (INEE) (Articles)

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