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dc.contributor.authorHusnen R., Abd-
dc.contributor.authorYarub, Al-Douri, Assoc. Prof. Dr.-
dc.contributor.authorNaser Mahmoud, Ahmed, Dr.-
dc.contributor.authorUda, Hashim, Prof. Dr.-
dc.date.accessioned2014-03-06T03:23:42Z-
dc.date.available2014-03-06T03:23:42Z-
dc.date.issued2013-
dc.identifier.citationInternational Journal of Electrochemical Science, vol. 8(9), 2013, pages 11461-11473en_US
dc.identifier.issn1452-3981-
dc.identifier.urihttp://www.electrochemsci.org/list13.htm#issue9-
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/32384-
dc.descriptionLink to publisher's homepage at http://www.electrochemsci.org/en_US
dc.description.abstractThe twining of alternative-current (AC) with electrochemical etching (ECE) to fabricate porous silicon (PS) is studied. The porosity percentage is obtained by gravimetric analysis. The effect of different current densities; 20, 25 and 30 mA/cm2 at 30 min on morphology and electrical properties of PS have been investigated. The electrical properties of I-V characteristics, Schottky barrier height, photoresponse and resposivity of PS are analyzed. The quantum efficiency is measured under different current densities. The obtained results showed quite distinguished results for best performance of photodetectors.en_US
dc.language.isoenen_US
dc.publisherElectrochemical Science Groupen_US
dc.subjectAlternative currenten_US
dc.subjectElectrical propertiesen_US
dc.subjectPorous siliconen_US
dc.titleAlternative-current electrochemical etching of uniform porous silicon for photodetector applicationsen_US
dc.typeArticleen_US
dc.contributor.urlhusnen78@yahoo.comen_US
dc.contributor.urlyarub@unimap.edu.myen_US
dc.contributor.urlnaser@usm.myen_US
dc.contributor.urluda@unimap.edu.myen_US
Appears in Collections:Uda Hashim, Prof. Ts. Dr.
Institute of Nano Electronic Engineering (INEE) (Articles)

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