Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/26559
Title: Theoretical investigations of NiTiSn and CoVSn compounds
Authors: Mustapha, Hichour
Djamel, Rached
R., Khenata
M. Zouaoui, Rabah
M., Merabet
Ali Hussain, Reshak, Prof. Dr.
S., Omran
Rashid, Ahmed
rachedj@yahoo.fr
Keywords: C. Ab initio calculations
D. Electronic structure
Issue Date: Aug-2012
Publisher: Elsevier Ltd.
Citation: Journal of Physics and Chemistry of Solids, vol. 73(8), 2012, pages 975-981
Abstract: The structural, elastic and electronic properties of NiTiSn and CoVSn half-Heusler compounds have been calculated using the full-potential linear muffin-tin orbital (FP-LMTO) method. The computed equilibrium lattice constants are in excellent agreement with the available experimental and theoretical data. The elastic constants Cij are calculated using the total energy variation with strain technique. The polycrystalline elastic moduli (namely: the shear modulus, Young's modulus, Poisson's ratio, Lamé's coefficients, sound velocities and the Debye temperature) were derived from the obtained single-crystal elastic constants. The ductility mechanism for the studied compounds is discussed via the elastic constants Cij and their related parameters. The electronic band structure calculations show that the conduction band minimum (CBM) is located at the X point for both compounds, whereas the valence band maximum (VBM) is located at the Г point for NiTiSn and at the L point for CoVSn, resulting in indirect energy band gaps of 0.46 and 0.75 eV for NiTiSn and CoVSn, respectively. The pressure and volume dependences of the energy band gaps have been calculated.
Description: Link to publisher's homepage at http://www.elsevier.com/
URI: http://www.sciencedirect.com/science/article/pii/S002236971200131X
http://dspace.unimap.edu.my/123456789/26559
ISSN: 0022-3697
Appears in Collections:School of Materials Engineering (Articles)

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