Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/26559
Full metadata record
DC FieldValueLanguage
dc.contributor.authorMustapha, Hichour-
dc.contributor.authorDjamel, Rached-
dc.contributor.authorR., Khenata-
dc.contributor.authorM. Zouaoui, Rabah-
dc.contributor.authorM., Merabet-
dc.contributor.authorAli Hussain, Reshak, Prof. Dr.-
dc.contributor.authorS., Omran-
dc.contributor.authorRashid, Ahmed-
dc.date.accessioned2013-07-10T07:27:28Z-
dc.date.available2013-07-10T07:27:28Z-
dc.date.issued2012-08-
dc.identifier.citationJournal of Physics and Chemistry of Solids, vol. 73(8), 2012, pages 975-981en_US
dc.identifier.issn0022-3697-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S002236971200131X-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/26559-
dc.descriptionLink to publisher's homepage at http://www.elsevier.com/en_US
dc.description.abstractThe structural, elastic and electronic properties of NiTiSn and CoVSn half-Heusler compounds have been calculated using the full-potential linear muffin-tin orbital (FP-LMTO) method. The computed equilibrium lattice constants are in excellent agreement with the available experimental and theoretical data. The elastic constants Cij are calculated using the total energy variation with strain technique. The polycrystalline elastic moduli (namely: the shear modulus, Young's modulus, Poisson's ratio, Lamé's coefficients, sound velocities and the Debye temperature) were derived from the obtained single-crystal elastic constants. The ductility mechanism for the studied compounds is discussed via the elastic constants Cij and their related parameters. The electronic band structure calculations show that the conduction band minimum (CBM) is located at the X point for both compounds, whereas the valence band maximum (VBM) is located at the Г point for NiTiSn and at the L point for CoVSn, resulting in indirect energy band gaps of 0.46 and 0.75 eV for NiTiSn and CoVSn, respectively. The pressure and volume dependences of the energy band gaps have been calculated.en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.subjectC. Ab initio calculationsen_US
dc.subjectD. Electronic structureen_US
dc.titleTheoretical investigations of NiTiSn and CoVSn compoundsen_US
dc.typeArticleen_US
dc.contributor.urlrachedj@yahoo.fren_US
Appears in Collections:School of Materials Engineering (Articles)

Files in This Item:
File Description SizeFormat 
Theoretical investigations of NiTiSn and CoVSn compounds.pdf31.34 kBAdobe PDFView/Open


Items in UniMAP Library Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.