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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/23641
Title: Differential equations to calculate the ionicity factor of hexagonal structure semiconductors
Authors: Ghassan E., Arif
Yarub, Al-Douri, Assoc. Prof. Dr.
Farah Aini, Abdullah, Dr.
Rabah, Khenata, Prof. Dr.
ghasanarif@yahoo.com
yaldouri@yahoo.com
farahaini@usm.my
khenata_rabah@yahoo.fr
Keywords: Analytical expression
Differential equations
Hexagonal structure
Ionicity factor
Issue Date: 2013
Publisher: Elsevier Ltd.
Citation: Superlattices and Microstructures, vol. 53(1), 2013, pages 24-30
Abstract: New mathematical models based on analytical expression and differential equations are established. The work aims to model ionicity factor based on energy gap of hexagonal structure semiconductors using density functional theory (DFT) of full-potential linear augmented plane wave (FP-LAPW) within Engel Vosko-General Gradient Approximation (EV-GGA). Our calculated values are in agreement with experimental and theoretical results.
Description: Link to publisher's homepage at http://www.elsevier.com/
URI: http://www.sciencedirect.com/science/article/pii/S0749603612002637
http://dspace.unimap.edu.my/123456789/23641
ISSN: 0749-6036
Appears in Collections:Institute of Nano Electronic Engineering (INEE) (Articles)

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