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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/23641
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dc.contributor.authorGhassan E., Arif-
dc.contributor.authorYarub, Al-Douri, Assoc. Prof. Dr.-
dc.contributor.authorFarah Aini, Abdullah, Dr.-
dc.contributor.authorRabah, Khenata, Prof. Dr.-
dc.date.accessioned2013-02-18T03:00:01Z-
dc.date.available2013-02-18T03:00:01Z-
dc.date.issued2013-
dc.identifier.citationSuperlattices and Microstructures, vol. 53(1), 2013, pages 24-30en_US
dc.identifier.issn0749-6036-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0749603612002637-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/23641-
dc.descriptionLink to publisher's homepage at http://www.elsevier.com/en_US
dc.description.abstractNew mathematical models based on analytical expression and differential equations are established. The work aims to model ionicity factor based on energy gap of hexagonal structure semiconductors using density functional theory (DFT) of full-potential linear augmented plane wave (FP-LAPW) within Engel Vosko-General Gradient Approximation (EV-GGA). Our calculated values are in agreement with experimental and theoretical results.en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.subjectAnalytical expressionen_US
dc.subjectDifferential equationsen_US
dc.subjectHexagonal structureen_US
dc.subjectIonicity factoren_US
dc.titleDifferential equations to calculate the ionicity factor of hexagonal structure semiconductorsen_US
dc.typeArticleen_US
dc.contributor.urlghasanarif@yahoo.comen_US
dc.contributor.urlyaldouri@yahoo.comen_US
dc.contributor.urlfarahaini@usm.myen_US
dc.contributor.urlkhenata_rabah@yahoo.fren_US
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