Please use this identifier to cite or link to this item:
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/22935
Title: | Confirmation of bulk modulus model of III-V compounds under pressure effect using tight-binding method |
Authors: | Yarub, Al - Douri yarub@unimap.edu.my |
Keywords: | Bulk modulus III-V compounds TB method |
Issue Date: | Jun-2012 |
Publisher: | Elsevier GmbH |
Citation: | Optik, vol. 123 (11), 2012, pages 989-992 |
Abstract: | The electronic band structure for GaAs, GaSb and GaP is studied using semi-empirical tight-binding sp 3s* method for tetrahedrally coordinated cubic materials. By means of our empirical model, the structural property of bulk modulus at critical transition pressure is calculated. Also, the GaAs, GaSb and GaP compounds are found to be indirect-gap semiconductors under pressure effect. The noticed behaviour of the bonding character reflects the structural phase transition. These results are in good agreement with experimental and theoretical data. |
Description: | Link to publisher's homepage at http://www.elsevier.com/ |
URI: | http://www.sciencedirect.com/science/article/pii/S003040261100369X http://dspace.unimap.edu.my/123456789/22935 |
ISSN: | 0030-4026 |
Appears in Collections: | Institute of Nano Electronic Engineering (INEE) (Articles) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
confirmation of bulk.pdf | 27.04 kB | Adobe PDF | View/Open |
Items in UniMAP Library Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.