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dc.contributor.authorYarub, Al - Douri-
dc.date.accessioned2013-01-11T02:33:13Z-
dc.date.available2013-01-11T02:33:13Z-
dc.date.issued2012-06-
dc.identifier.citationOptik, vol. 123 (11), 2012, pages 989-992en_US
dc.identifier.issn0030-4026-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S003040261100369X-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/22935-
dc.descriptionLink to publisher's homepage at http://www.elsevier.com/en_US
dc.description.abstractThe electronic band structure for GaAs, GaSb and GaP is studied using semi-empirical tight-binding sp 3s* method for tetrahedrally coordinated cubic materials. By means of our empirical model, the structural property of bulk modulus at critical transition pressure is calculated. Also, the GaAs, GaSb and GaP compounds are found to be indirect-gap semiconductors under pressure effect. The noticed behaviour of the bonding character reflects the structural phase transition. These results are in good agreement with experimental and theoretical data.en_US
dc.language.isoenen_US
dc.publisherElsevier GmbHen_US
dc.subjectBulk modulusen_US
dc.subjectIII-V compoundsen_US
dc.subjectTB methoden_US
dc.titleConfirmation of bulk modulus model of III-V compounds under pressure effect using tight-binding methoden_US
dc.typeArticleen_US
dc.contributor.urlyarub@unimap.edu.myen_US
Appears in Collections:Institute of Nano Electronic Engineering (INEE) (Articles)

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