Ultra-thin body and thin-BOX SOI CMOS technology analog ﬁgures of merit

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Title:	Ultra-thin body and thin-BOX SOI CMOS technology analog ﬁgures of merit
Authors:	Kilchytska, Valeria I. Mohd Khairuddin, Md Arshad Makovejev, Sergej Olsen, Sarah H. Andrieu, Francois Poiroux, Thierry Faynot, Olivier Raskin, Jean Pierre Flandre, Denis valeriya.kilchytska@uclouvain.be mohd.khairuddin@unimap.edu.my
Keywords:	Ultra-thin body FD SOI MOSFETs Ultra-thin BOX Analog ﬁgures of merit Cut-off frequency High-temperature Output conductance
Issue Date:	Apr-2012
Publisher:	Elsevier Ltd.
Citation:	Solid-State Electronics, vol.70, 2012, pages 50–58
Abstract:	In this paper, we analyze, for the ﬁrst time to our best knowledge, the perspectives of ultra-thin body and ultra-thin BOX (UTBB) SOI CMOS technology for analog applications. We show that UTBB is a promising contender for analog applications, exhibiting high maximum transconductance, drive current, intrinsic gain and achievable cut-off frequencies in the range of 150–220 GHz. Effect of operation regime, substrate bias, channel width and high temperature (up to 250 C) on analog ﬁgures-of-merit (FoM) are analyzed. Benchmarking of UTBB with other technologies (as planar FD SOI, different FinFETs, UTB with thick BOX) is presented.
Description:	Link to publisher's homepage at http://www.elsevier.com/
URI:	http://www.sciencedirect.com/science/article/pii/S0038110111004163 http://dspace.unimap.edu.my/123456789/22922
ISSN:	0038-1101
Appears in Collections:	School of Microelectronic Engineering (Articles)

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