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dc.contributor.authorKilchytska, Valeria I.-
dc.contributor.authorMohd Khairuddin, Md Arshad-
dc.contributor.authorMakovejev, Sergej-
dc.contributor.authorOlsen, Sarah H.-
dc.contributor.authorAndrieu, Francois-
dc.contributor.authorPoiroux, Thierry-
dc.contributor.authorFaynot, Olivier-
dc.contributor.authorRaskin, Jean Pierre-
dc.contributor.authorFlandre, Denis-
dc.date.accessioned2013-01-10T10:18:51Z-
dc.date.available2013-01-10T10:18:51Z-
dc.date.issued2012-04-
dc.identifier.citationSolid-State Electronics, vol.70, 2012, pages 50–58en_US
dc.identifier.issn0038-1101-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0038110111004163-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/22922-
dc.descriptionLink to publisher's homepage at http://www.elsevier.com/en_US
dc.description.abstractIn this paper, we analyze, for the first time to our best knowledge, the perspectives of ultra-thin body and ultra-thin BOX (UTBB) SOI CMOS technology for analog applications. We show that UTBB is a promising contender for analog applications, exhibiting high maximum transconductance, drive current, intrinsic gain and achievable cut-off frequencies in the range of 150–220 GHz. Effect of operation regime, substrate bias, channel width and high temperature (up to 250 C) on analog figures-of-merit (FoM) are analyzed. Benchmarking of UTBB with other technologies (as planar FD SOI, different FinFETs, UTB with thick BOX) is presented.en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.subjectUltra-thin body FD SOI MOSFETsen_US
dc.subjectUltra-thin BOXen_US
dc.subjectAnalog figures of meriten_US
dc.subjectCut-off frequencyen_US
dc.subjectHigh-temperatureen_US
dc.subjectOutput conductanceen_US
dc.titleUltra-thin body and thin-BOX SOI CMOS technology analog figures of meriten_US
dc.typeArticleen_US
dc.contributor.urlvaleriya.kilchytska@uclouvain.been_US
dc.contributor.urlmohd.khairuddin@unimap.edu.myen_US
Appears in Collections:School of Microelectronic Engineering (Articles)

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