Effect of different dielectric materials for Ultrathin Oxide

Abstract

This paper I want to describe the reliability study of the effect of different dielectric materials for ultrathin oxide. The alternative high–k gate dielectrics are to provide a substantially thicker (physical thickness) for an improved performance according to increase permittivity, physical thickness characteristic and reduced leakage current. Design considerations for ultrathin gate oxide MOSFET devices are presented. Based on simulation and theory background it is shown that the most important parameters are the type of dielectrics materials and deposit thickness of dielectric materials. Experimental evidence for ultrathin gate oxide has been presented.