Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile

Abstract

The principal focus of this project is dry etching technique by using the Inductively Couple Plasma-Reactive Ion Etching (ICP-RIE). An (ICP) system was chosen because of its high plasma density and low cost relative to other high density plasma etching systems. The etch rates and picture size were studied as a function of ICP power, pressure, RF power bias, process time and gas composition. Dry etching technique is favoured in most etching work due to it’s etch rate properties. This project to provide a recipe for get the effect of different gases parameter in dry etching process on etch rate profile. For obtain the profile etch rate and picture size by using a profilometer and Scanning Electron Microscope (SEM) imaging.