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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/1969| Title: | Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI |
| Authors: | Low Pooi Lam Norhawati Ahmad (Advisor) |
| Keywords: | Metal oxide semiconductors, Complementary CMOS transistors Transistors Semiconductors Silicon Integrated circuits |
| Issue Date: | Apr-2008 |
| Publisher: | Universiti Malaysia Perlis |
| Abstract: | Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by TSUPREM-4 simulator and electrical characteristics extraction will done by MEDICI simulator. The scaled parameters are gate length and threshold voltage. The result for electrical characteristics does not show any saturation. There might be due to the effect of Channel Length Modulation and Short Channel Effect. |
| Description: | Access is limited to UniMAP community. |
| URI: | http://dspace.unimap.edu.my/123456789/1969 |
| Appears in Collections: | School of Microelectronic Engineering (FYP) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Abstract, Acknowledgment.pdf | 146.22 kB | Adobe PDF | View/Open | |
| Conclusion.pdf | 87.41 kB | Adobe PDF | View/Open | |
| Introduction.pdf | 87.38 kB | Adobe PDF | View/Open | |
| Literature review.pdf | 1.02 MB | Adobe PDF | View/Open | |
| Methodology.pdf | 4.09 MB | Adobe PDF | View/Open | |
| References and appendix.pdf | 104.99 kB | Adobe PDF | View/Open | |
| Results and discussion.pdf | 266.91 kB | Adobe PDF | View/Open |
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