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dc.contributor.authorLow Pooi Lam-
dc.date.accessioned2008-09-07T02:41:30Z-
dc.date.available2008-09-07T02:41:30Z-
dc.date.issued2008-04-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/1969-
dc.descriptionAccess is limited to UniMAP community.-
dc.description.abstractPhysical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by TSUPREM-4 simulator and electrical characteristics extraction will done by MEDICI simulator. The scaled parameters are gate length and threshold voltage. The result for electrical characteristics does not show any saturation. There might be due to the effect of Channel Length Modulation and Short Channel Effect.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.subjectMetal oxide semiconductors, Complementaryen_US
dc.subjectCMOS transistorsen_US
dc.subjectTransistorsen_US
dc.subjectSemiconductorsen_US
dc.subjectSiliconen_US
dc.subjectIntegrated circuitsen_US
dc.titleElectrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICIen_US
dc.typeLearning Objecten_US
dc.contributor.advisorNorhawati Ahmad (Advisor)en_US
dc.publisher.departmentSchool of Microelectronic Engineeringen_US
Appears in Collections:School of Microelectronic Engineering (FYP)

Files in This Item:
File Description SizeFormat 
Abstract, Acknowledgment.pdf146.22 kBAdobe PDFView/Open
Conclusion.pdf87.41 kBAdobe PDFView/Open
Introduction.pdf87.38 kBAdobe PDFView/Open
Literature review.pdf1.02 MBAdobe PDFView/Open
Methodology.pdf4.09 MBAdobe PDFView/Open
References and appendix.pdf104.99 kBAdobe PDFView/Open
Results and discussion.pdf266.91 kBAdobe PDFView/Open


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