UniMAP Library Digital Repository JSPUI
UniMAP Library Digital Repository preserves and enables easy and open access to all types of digital content including text, images, moving images, mpegs and data sets
Learn More
Please use this identifier to cite or link to this item:
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/13826| Title: | Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material |
| Authors: | Cheong, Kuan Yew, Dr. |
| Keywords: | Metal-oxide semiconductor (MOS) Nitrided gate oxide Silicon carbide (SiC) Nonvolatile random-access memory (NVRAM) |
| Issue Date: | Aug-2005 |
| Publisher: | The Institution of Engineers, Malaysia |
| Citation: | p. 10-12, 14, 16 |
| Series/Report no.: | Jurutera 2005 (8) |
| Abstract: | The extraordinary intrinsic properties of silicon carbide (SiC) have made this material a suitablechoice to use in high temperature, high frequency, and high voltage applications. In addition to this, SiC could be employed as the base material for nonvolatile Random Access Memory, mainly due toits extremely low thermal-generation rate at room temperature. In this paper, the reasons of using thismaterial in this particular application are presented and the development of the application over thepast fifteen years is reviewed. |
| Description: | Link to publisher’s homepage at http://www.myiem.org.my/ |
| URI: | http://www.myiem.org.my/content/iem_bulletin_2004_2007-163.aspx http://dspace.unimap.edu.my/123456789/13826 |
| ISSN: | 0126-9909 |
| Appears in Collections: | Jurutera (Bulletin) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| silicon.pdf | 773.77 kB | Adobe PDF | View/Open |
Items in UniMAP Library Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.