Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material

Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/13826

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DC Field	Value	Language
dc.contributor.author	Cheong, Kuan Yew, Dr.	-
dc.date.accessioned	2011-09-19T16:59:40Z	-
dc.date.available	2011-09-19T16:59:40Z	-
dc.date.issued	2005-08	-
dc.identifier.citation	p. 10-12, 14, 16	en_US
dc.identifier.issn	0126-9909	-
dc.identifier.uri	http://www.myiem.org.my/content/iem_bulletin_2004_2007-163.aspx	-
dc.identifier.uri	http://dspace.unimap.edu.my/123456789/13826	-
dc.description	Link to publisher’s homepage at http://www.myiem.org.my/	en_US
dc.description.abstract	The extraordinary intrinsic properties of silicon carbide (SiC) have made this material a suitablechoice to use in high temperature, high frequency, and high voltage applications. In addition to this, SiC could be employed as the base material for nonvolatile Random Access Memory, mainly due toits extremely low thermal-generation rate at room temperature. In this paper, the reasons of using thismaterial in this particular application are presented and the development of the application over thepast fifteen years is reviewed.	en_US
dc.language.iso	en	en_US
dc.publisher	The Institution of Engineers, Malaysia	en_US
dc.relation.ispartofseries	Jurutera	en_US
dc.relation.ispartofseries	2005 (8)	en_US
dc.subject	Metal-oxide semiconductor (MOS)	en_US
dc.subject	Nitrided gate oxide	en_US
dc.subject	Silicon carbide (SiC)	en_US
dc.subject	Nonvolatile random-access memory (NVRAM)	en_US
dc.title	Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material	en_US
dc.type	Article	en_US
Appears in Collections:	Jurutera (Bulletin)

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