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Title: | Investigated optical studies of Si quantum dot |
Authors: | Y., Al-Douri R., Khenata A.H., Reshak |
Keywords: | Optical properties Quantum dot Si |
Issue Date: | Sep-2011 |
Publisher: | Elsevier Ltd. |
Citation: | Solar Energy, vol. 85(9), 2011, pages 2283-2287 |
Abstract: | Further study of the quantum dot potential for Si is presented. This potential has been calculated by means of our recent empirical model. The indirect energy gap (Γ-X) is calculated using the full potential-linearized augmented plane wave (FP-LAPW) method. The Engel-Vosko generalized gradient approximation (EV-GGA) formalism is used to optimize the corresponding potential for energetic transition and optical properties calculations of Si. The refractive index and transverse effective charge are predicted as a function of dot diameter that is in turn used to test the validity of our model. The obtained results show a reasonable agreement in comparison with experimental data and theoretical results. |
Description: | Link to publisher's homepage at www.elsevier.com/ |
URI: | http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6V50-5397D3C-1-6&_cdi=5772&_user=1659113&_pii=S0038092X11002295&_origin=&_coverDate=09%2F30%2F2011&_sk=999149990&view=c&wchp=dGLbVzz-zSkzV&md5=d9c55b7e9229a50948da194ea9efbc23&ie=/sdarticle.pdf http://dspace.unimap.edu.my/123456789/13616 10.1016/j.solener.2011.06.017 |
ISSN: | 0038-092X |
Appears in Collections: | Institute of Nano Electronic Engineering (INEE) (Articles) |
Files in This Item:
File | Description | Size | Format | |
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investigated of quantum.pdf | 39 kB | Adobe PDF | View/Open |
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