Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/13616
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dc.contributor.authorY., Al-Douri-
dc.contributor.authorR., Khenata-
dc.contributor.authorA.H., Reshak-
dc.date.accessioned2011-08-25T08:15:25Z-
dc.date.available2011-08-25T08:15:25Z-
dc.date.issued2011-09-
dc.identifier.citationSolar Energy, vol. 85(9), 2011, pages 2283-2287en_US
dc.identifier.issn0038-092X-
dc.identifier.urihttp://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6V50-5397D3C-1-6&_cdi=5772&_user=1659113&_pii=S0038092X11002295&_origin=&_coverDate=09%2F30%2F2011&_sk=999149990&view=c&wchp=dGLbVzz-zSkzV&md5=d9c55b7e9229a50948da194ea9efbc23&ie=/sdarticle.pdf-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/13616-
dc.identifier.uri10.1016/j.solener.2011.06.017-
dc.descriptionLink to publisher's homepage at www.elsevier.com/en_US
dc.description.abstractFurther study of the quantum dot potential for Si is presented. This potential has been calculated by means of our recent empirical model. The indirect energy gap (Γ-X) is calculated using the full potential-linearized augmented plane wave (FP-LAPW) method. The Engel-Vosko generalized gradient approximation (EV-GGA) formalism is used to optimize the corresponding potential for energetic transition and optical properties calculations of Si. The refractive index and transverse effective charge are predicted as a function of dot diameter that is in turn used to test the validity of our model. The obtained results show a reasonable agreement in comparison with experimental data and theoretical results.en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.subjectOptical propertiesen_US
dc.subjectQuantum doten_US
dc.subjectSien_US
dc.titleInvestigated optical studies of Si quantum doten_US
dc.typeArticleen_US
Appears in Collections:Institute of Nano Electronic Engineering (INEE) (Articles)

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