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dc.contributor.authorSohiful Anuar, Zainol Murad-
dc.contributor.authorPokharel, R. K.-
dc.contributor.authorSapawi, R.-
dc.contributor.authorKanaya, H.-
dc.contributor.authorYoshida, K.-
dc.date.accessioned2011-01-12T02:54:00Z-
dc.date.available2011-01-12T02:54:00Z-
dc.date.issued2010-08-
dc.identifier.citationIEEE Transactions on Consumer Electronics, vol. 56(3), 2010, pages 1241-1246en_US
dc.identifier.issn0098-3063-
dc.identifier.urihttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5606253-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/10461-
dc.descriptionLink to publisher's homepage at http://ieeexplore.ieee.org/en_US
dc.description.abstractThis paper describes the design of 3.1 to 4.8 GHz CMOS power amplifier (PA) for ultra-wideband (UWB) applications using 0.18-m CMOS technology. The UWB PA proposed here employs cascode topology with a currentreused technique to enhance the gain at the upper end of the desired band, an inter-stage inductor, and a resistive feedback at the second stage to obtain the flatness gain. The measurement results indicated that the input return loss (S11) was less than -5 dB, output return loss (S22) was less than -8 dB, and average power gain of 10.3 dB with a flatness about 0.8 dB. The input 1 dB compression point about -2 dBm and excellent phase linearity (group delay) of ± 135 ps across the whole band were obtained. Moreover, a very high power added efficiency (PAE) of 40.5% at 4 GHz with 50Σ load impedance was achieved with a power consumption of 24- mW.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.subjectCurrent-reuseden_US
dc.subjectPower added efficiencyen_US
dc.subjectPower amplifieren_US
dc.subjectUltra widebanden_US
dc.titleHigh efficiency, good linearity, and excellent phase linearity of 3.1-4.8 GHz CMOS UWB PA with a current-reused techniqueen_US
dc.typeArticleen_US
dc.contributor.urlsohiful@unimap.edu.myen_US
dc.contributor.urlmurad@yossvr3.ed.kyushu-u.ac.jpen_US
Appears in Collections:School of Microelectronic Engineering (Articles)

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