Design of high-side MOSFET driver using discrete components for 24V operation

Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/10318

Title:	Design of high-side MOSFET driver using discrete components for 24V operation
Authors:	Rosnazri, Ali Ismail, Daut, Prof. Dr. Noor Shahida, Jamoshid Abdul Rahim, Abd Razak rosnazri@unimap.edu.my
Keywords:	Bootstrap circuit Floating mosfet driver H-bridge inverter design High-side mosfet driver Level shifter
Issue Date:	23-Jun-2010
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
Citation:	p.132-136
Series/Report no.:	Proccedings of the 4th International Power Engineering and Optimization Conference (PEOCO) 2010
Abstract:	This paper presents the design of a high-side N-channel MOSFET driver using discrete components for 24Vdc operation. Special level shifting technique is used to increase the gate voltage higher than the supply voltage. Voltage readings at various points of the driver were also taken for reference. The designed high-side driver was tested to observe its performance with respect to different gate input frequencies, from 50Hz up to 150kHz using the MOSFET IRF730 as the switching device. The results obtained indicate that the driver circuit works well up to frequency of 150kHz where the width ratio found to be more than 72%.
Description:	Link to publisher's homepage at http://ieeexplore.ieee.org/
URI:	http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5559191 http://dspace.unimap.edu.my/123456789/10318
ISBN:	978-1-4244-7127-0
Appears in Collections:	Conference Papers Ismail Daut, Prof. Dr.

Files in This Item:

File	Description	Size	Format
Design of high.pdf		42.05 kB	Adobe PDF	View/Open

UniMAP Library Digital Repository JSPUI