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dc.contributor.authorRosnazri, Ali-
dc.contributor.authorIsmail, Daut, Prof. Dr.-
dc.contributor.authorNoor Shahida, Jamoshid-
dc.contributor.authorAbdul Rahim, Abd Razak-
dc.date.accessioned2010-11-26T03:20:01Z-
dc.date.available2010-11-26T03:20:01Z-
dc.date.issued2010-06-23-
dc.identifier.citationp.132-136en_US
dc.identifier.isbn978-1-4244-7127-0-
dc.identifier.urihttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5559191-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/10318-
dc.descriptionLink to publisher's homepage at http://ieeexplore.ieee.org/en_US
dc.description.abstractThis paper presents the design of a high-side N-channel MOSFET driver using discrete components for 24Vdc operation. Special level shifting technique is used to increase the gate voltage higher than the supply voltage. Voltage readings at various points of the driver were also taken for reference. The designed high-side driver was tested to observe its performance with respect to different gate input frequencies, from 50Hz up to 150kHz using the MOSFET IRF730 as the switching device. The results obtained indicate that the driver circuit works well up to frequency of 150kHz where the width ratio found to be more than 72%.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.ispartofseriesProccedings of the 4th International Power Engineering and Optimization Conference (PEOCO) 2010en_US
dc.subjectBootstrap circuiten_US
dc.subjectFloating mosfet driveren_US
dc.subjectH-bridge inverter designen_US
dc.subjectHigh-side mosfet driveren_US
dc.subjectLevel shifteren_US
dc.titleDesign of high-side MOSFET driver using discrete components for 24V operationen_US
dc.typeWorking Paperen_US
dc.contributor.urlrosnazri@unimap.edu.myen_US
Appears in Collections:Conference Papers
Ismail Daut, Prof. Dr.

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