Comparison on various developing method at clean track ACT 8 based on 0.5um CMOS Technology

Abstract

Photoresist development is one of the critical steps in ensuring good critical dimension uniformity (CDU). In this paper, we demonstrate the methods by using 0.5um CMOS Technology Gate pattern. There methods used at our coater and developer system are standard, agitate and prewet. 25 pieces of 8 “dummy wafers were used for each method. All wafers were coated with 1.0um thickness of photoresist before we exposed it using Nikon stepper i14. Then the wafers were developed using different type of developing method at CLEAN TRACK ACT 8. These 3 batches of bare silicon wafers were run continuously in order to eliminate the variations of room humidity and temperature between runs. 13 wafers from each developing method we chosen as a sample to be measured at CD SEM system. 9 locations of CD measurement were measured in each wafer. CD vs. Wafer No graph were plotted in order to check the stability of CD measurement. Our finding from the study is that the agitation developing method gave the most stable and uniform CD measurement.