| dc.contributor.author | Norainon, Mohamed | |
| dc.contributor.author | Muhamad Zahim, Sujod | |
| dc.date.accessioned | 2010-08-19T05:08:09Z | |
| dc.date.available | 2010-08-19T05:08:09Z | |
| dc.date.issued | 2009-06-20 | |
| dc.identifier.citation | p.538-543 | en_US |
| dc.identifier.uri | http://dspace.unimap.edu.my/123456789/8851 | |
| dc.description | MUCEET 2009 is organized by Malaysian Technical Universities Network (MTUN) comprising of Universiti Malaysia Perlis (UniMAP), Universiti Tun Hussein Onn (UTHM), Universiti Teknikal Melaka (UTeM) and Universiti Malaysia Pahang (UMP), 20th - 22nd June 2009 at M. S. Garden Hotel, Kuantan, Pahang. | en_US |
| dc.description.abstract | SiC GTO thyristor complimented by
the material advantages of SiC has better
characteristics than its Si GTO thyristor
counterpart. The high-voltage operation of SiC is
evaluated for use in inductively loaded switching
circuits. Compared to purely resistively elements,
inductive loads subject the switching device ti
higher internal power dissipation. This paper
presented two dimensional the fast-switching
behavior of 4H-SiC GTO thyristor under
inductive load in MATLAB/Simulink
surrounding. The turn-on and turn-off
characteristics of the 4H-SiC GTO thyristor
compared to common Si GTO thyristor are
discussed. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Malaysia Pahang (UMP) | en_US |
| dc.relation.ispartofseries | Proceedings of the Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009 | en_US |
| dc.subject | Silicon carbide (SiC) | en_US |
| dc.subject | GTO thyristor | en_US |
| dc.subject | Turn-off time | en_US |
| dc.subject | Poisson’s equation | en_US |
| dc.subject | MATLAB/Simulink | en_US |
| dc.subject | Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009 | en_US |
| dc.title | Fast-switching of 4H-SiC GTO thyristor under inductive load in MATLAB/Simulink surrounding | en_US |
| dc.type | Working Paper | en_US |
