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dc.contributor.authorAhmed, N. M.
dc.contributor.authorZaliman, Sauli, Prof. Madya
dc.contributor.authorUda, Hashim, Prof. Dr.
dc.contributor.authorZul Azhar, Zahid Jamal, Prof. Dr.
dc.date.accessioned2010-08-18T07:33:51Z
dc.date.available2010-08-18T07:33:51Z
dc.date.issued2009-06-01
dc.identifier.citationVol. 1136, 2009, p.161-165en_US
dc.identifier.issn0094-243X
dc.identifier.urihttp://link.aip.org/link/?APCPCS/1136/161/1
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/8826
dc.descriptionLink to publisher's homepage at http://www.aip.org/en_US
dc.description.abstractPorous silicon layer microstructure is sensitive to many parameters, which need to be controlled during etching. These include not only anodization time, current density, applied potential and electrolyte composition but also the structure of electrodes. In the electrochemical formation cell of porous silicon the structure of electrodes greatly influences the planar uniformity of the porous silicon layer. In this paper a systematic study of the planar uniformity of small area porous silicon layer formed by different electrode structure is reported based on photoluminescence. A new design of the electrode structure is developed for achieving satisfactory planar uniformity of small area porous silicon layer.en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofseriesProceedings of the International Conference on Nanoscience and Nanotechnology 2008en_US
dc.subjectElectrochemicalen_US
dc.subjectPhotoluminescenceen_US
dc.subjectPorous siliconen_US
dc.subjectElectrochemical electrodesen_US
dc.subjectPhotoluminescenceen_US
dc.subjectNanostructured materialsen_US
dc.subjectInternational Conference on Nanoscience and Nanotechnologyen_US
dc.titleElectrode design and planar uniformity of anodically etched small area porous siliconen_US
dc.typeWorking Paperen_US


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