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dc.contributor.authorUda, Hashim, Prof. Dr.
dc.contributor.authorKasim, Abdul Rahman
dc.contributor.authorHakim
dc.contributor.authorMohd Azri, Othman
dc.date.accessioned2010-08-18T01:49:31Z
dc.date.available2010-08-18T01:49:31Z
dc.date.issued2009-06-01
dc.identifier.citationVol.1136, 2009, p. 253-258en_US
dc.identifier.issn0094-243X
dc.identifier.urihttp://link.aip.org/link/?APCPCS/1136/253/1
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/8795
dc.descriptionLink to publisher's homepage at http://www.aip.org/en_US
dc.description.abstractIn this work, cadmium sulphide (CdS) target with 99.999% purity was used as a target in RF magnetron sputtering. The sputtering experiment was conducted onto silicon oxide substrates at different temperatures ranging from 200°C to 400°C in 50°C steps, using a capacitive coupled magnetron cathode with 13.65 MHz that at higher magnetron power. After all investigations, it was concluded that 300°C substrate temperature is suitable for producing CdS films on silicon wafer with RF magnetron sputtering and the examined properties (good crystallinity and low resistivity) of this film show its feasibility for technological purposes, especially for light sensor cells.en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofseriesProceedings of the International Conference on Nanoscience and Nanotechnology 2008en_US
dc.subjectCadmium sulphide (CdS)en_US
dc.subjectResistivityen_US
dc.subjectRF magnetron sputteringen_US
dc.subjectX-ray diffractionen_US
dc.subjectMalaysian Technical Universities Conference on Engineering and Technology (MUCEET)en_US
dc.titleCdS film thickness characterization by R.F. magnetron sputteringen_US
dc.typeWorking Paperen_US


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